AMMC – 6408 PDF

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These ratings apply to each individual FET 5. Vofs can be measured at a single reference temperature.

Data subject to change. Integrated RF power detector?

AMMC-6408 Datasheet PDF

Typical Gain and Reverse Isolation Figure 2. In a finalized package form, Vd1 and Vd2 terminals are commonly connected to the Vdd terminal. Vofs 640 either be characterized over temperature and stored in a lookup table, or it can be measured at two temperatures ammv a linear fit used to calculate Vofs at any temperature. The drift error will be less than 0. Junction operating temperature will directly affect the device MTTF.

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A typical measured detector voltage versus output power at 18GHz is shown Figure Muting can be accomplished by setting Vgg to the pinch-off voltage Vp. Typical IM3 level and Ids vs.

No ground wires are needed since ground connections are amcm with plated through-holes to the backside of the device. Typical ESD diode current versus diode voltage for connected diodes in series Figure Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.

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This method gives an error due to temperature drift of less than 0. Electro Discharge Damage and Control. Input port partially matched For narrowband applications, customer may obtain optimum matching and gain with an additional matching circuit?

Negative supply is used for the DC gate biasing.

AMMC-6408 6-18 GHz 1W Power Amplifier

Frequency range 6 to 18 GHz? Typical S11 over temperature Figure Operation in excess of any one of these conditions may result in permanent damage to this device. Typical ESD diode current versus diode voltage for connected diodes in series is shown in Figure Observe Precautions for handling electrostatic sensitive devices.

There are three methods to calculate Vofs: Small signal Gain of 18dB?

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Broadband Wireless Access including am,c A single DC gate akmc connected to Vg will bias all gain stages. Minor improvements in performance are possible depending on the application.

Typical S22 over temperature Figure Vofs can be measured before each detector measurement by removing or switching off the power source and measuring Vref – Vdet.

For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. Wide Frequency Range GHz? Typical IM3 level vs. The bonding diagram for the recommended assembly is shown in Figure This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies 9.

An optional output power detector network is also provided. This method gives an error close to the method 1. The drain bias voltage range is 3 to 5V.

This data represents package part performances, and does not contain test fixture losses.